Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChao-Wei Hsu
Life of this patent
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Abstract
A semiconductor device includes a semiconductor fin and a gate structure above the semiconductor fin. The semiconductor fin includes a bottom portion and a top portion above the bottom portion. The bottom portion and the top portion are made of different materials. The top portion includes a head part and a neck part between the head part and the bottom portion. The neck part has a width less than a width of the head part, and the neck part is in contact with the bottom portion.
Claims20
A method for manufacturing a semiconductor device, comprising:
- implanting a substrate;
- after implanting the substrate, forming a first patterned mask layer over the substrate, wherein the first patterned mask layer comprises mask portions separated from each other;
- depositing an epitaxial layer above the first patterned mask layer and in contact with the substrate;
- etching the epitaxial layer, the first patterned mask layer, and the substrate to form at least one semiconductor fin;
- forming an isolation structure adjacent the semiconductor fin;
- and
- forming a gate structure above the semiconductor fin and the isolation structure.
A method for manufacturing a semiconductor device, comprising:
- depositing a first epitaxial layer over a substrate;
- forming a trench in the first epitaxial layer such that the trench exposes the substrate;
- forming a plurality of masks in the trench and on the substrate, wherein top surfaces of the plurality of masks are lower than a top surface of the first epitaxial layer;
- depositing a second epitaxial layer over the plurality of masks and in the trench;
- patterning the second epitaxial layer, the plurality of masks, and the substrate to form a fin structure;
- and
- forming a gate structure over the fin structure.
A method for manufacturing a semiconductor device, comprising:
- depositing a first epitaxial layer over a substrate;
- forming a trench in the first epitaxial layer;
- forming a dielectric structure in the trench of the first epitaxial layer;
- depositing a second epitaxial layer over the substrate and in the trench of the first epitaxial layer such that a void is defined by the second epitaxial layer and the dielectric structure;
- patterning the first epitaxial layer, the second epitaxial layer, the dielectric structure, and the substrate to form a first fin structure comprising a portion of the first epitaxial layer and a portion of the substrate and a second fin structure comprising a portion of the second epitaxial layer and another portion of the substrate;
- and
- forming a gate structure to cover the first and second fin structures.
Dependencies are inferred from the claim text.