Semiconductor device

A semiconductor device having a channel, the semiconductor device comprising:

• a semiconductor substrate having a first main surface and a second main surface on the opposite side of the first main surface, and having an in-plane direction parallel to the second main surface;
• a drain electrode provided on the first main surface of the semiconductor substrate;
• a drift layer provided on the second main surface of the semiconductor substrate and having a first conductivity type;
• a well region provided on the drift layer, having a second conductivity type different from the first conductivity type, and having a part forming the channel of the semiconductor device;
• a well contact region provided on the well region, having the second conductivity type, and having a resistivity lower than that of the well region;
• a source contact region provided on the well region, separated from the drift layer by the well region, and having the first conductivity type;
• a source resistance region provided on the well region, separated from the drift layer by the well region, adjacent to the source contact region in the in-plane direction, having the first conductivity type, and having a sheet resistance higher than that of the source contact region;
• a gate insulating film covering the channel of the well region;
• a gate electrode provided on the gate insulating film;
• and
• a source electrode contacting the source contact region and the well contact region, and continuous with the channel at least through the source resistance region, the source electrode directly contacting the source resistance region.