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US 11,309,415 B2Granted
Wide gap semiconductor device
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorShunichi Nakamura
Life of this patent
Estimating the term…
Abstract
A wide gap semiconductor device has: a first MOSFET region (M0) having a first gate electrode 10 and a first source region 30 provided in a first well region 20 made of a second conductivity type; a second MOSFET region (M1) provided below a gate pad 100 and having a second gate electrode 110 and a second source region 130 provided in a second well region 120 made of the second conductivity type; and a built-in diode region electrically connected to the second gate electrode 110. The second source region 130 of the second MOSFET region (M1) is electrically connected to the gate pad 100.
Claims15
A wide gap semiconductor device comprising:
- a drift layer using a wide gap semiconductor material of a first conductivity type;
- a source pad;
- a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type;
- a gate pad;
- a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type;
- a built-in diode region electrically connected to the second gate electrode;
- and
- a withstand voltage structure which surrounds all of the first MOSFET region, the second MOSFET region and the built-in diode region,
- wherein
- the second source region of the second MOSFET region is electrically connected to the gate pad.
7 more elements
A wide gap semiconductor device comprising:
- a drift layer using a wide gap semiconductor material of a first conductivity type;
- a source pad;
- a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type;
- a gate pad;
- a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type;
- and
- a built-in diode region electrically connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad, and
- in a first well region at least a part of which is provided below the gate pad, a first protection diode region electrically connected to the source pad and the gate pad is provided.
5 more elements
A wide gap semiconductor device comprising:
- a drift layer using a wide gap semiconductor material of a first conductivity type;
- a source pad;
- a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type;
- a gate pad;
- a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type;
- a built-in diode region electrically connected to the second gate electrode, and
- a diode pad connected to the second gate electrode, wherein
- the second source region of the second MOSFET region is electrically connected to the gate pad, and
- in a second well region at least a part of which is provided below the diode pad, a second protection diode region electrically connected to the diode pad and the gate pad is provided.
6 more elements
A wide gap semiconductor device comprising:
- a drift layer using a wide gap semiconductor material of a first conductivity type;
- a source pad;
- a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type;
- a gate pad;
- a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type;
- a built-in diode region electrically connected to the second gate electrode;
- and
- a diode pad connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad, and
- in a first well region at least a part of which is provided below the diode pad, a second protection diode region electrically connected to the diode pad and the source pad is provided.
6 more elements
A wide gap semiconductor device comprising:
- a drift layer using a wide gap semiconductor material of a first conductivity type;
- a source pad;
- a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type;
- a gate pad;
- a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type;
- a built-in diode region electrically connected to the second gate electrode;
- and
- a diode pad connected to the second gate electrode, wherein
- the second source region of the second MOSFET region is electrically connected to the gate pad, and
- in a first well region at least a part of which is provided below the diode pad, a second protection diode region electrically connected to the diode pad and the source pad is provided.
7 more elements
A wide gap semiconductor device comprising:
- a drift layer using a wide gap semiconductor material of a first conductivity type;
- a source pad;
- a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type;
- a gate pad;
- a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type;
- and
- a built-in diode region electrically connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad,
- a first connection region electrically connected to the second gate electrode is provided below the gate pad, and
- in a second well region located below the gate pad, a resistance region having a low-concentration first conductivity type region electrically connected to the first connection region and the gate pad is provided.
6 more elements
A wide gap semiconductor device comprising:
- a drift layer using a wide gap semiconductor material of a first conductivity type;
- a source pad;
- a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type;
- a gate pad;
- a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type;
- and
- a built-in diode region electrically connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad,
- a first connection region electrically connected to the second gate electrode is provided below the gate pad,
- a second wiring layer electrically connected to the first connection region and the second gate electrode is provided between the source pad and the gate pad in an in-plane direction,
- the built-in diode region is electrically connected to the second gate electrode via the second wiring layer and the first connection region, and
- a second protection diode region electrically connected to the second wiring layer and the source pad is provided in a first well region at least a part of which is provided below the second wiring layer.
8 more elements
Dependencies are inferred from the claim text.