Insulated gate bipolar transistor and method of manufacturing same

An insulated gate bipolar transistor, comprising:

• a collector electrode;
• a collector layer on the collector electrode, the collector layer having a first conductivity type;
• a buffer layer on the collector layer, the buffer layer having a second conductivity type;
• a drift region on the buffer layer, the drift region having the second conductivity type;
• a body region on the drift region, the body region having the first conductivity type;
• a plurality of trench gates penetrating the body region, configured to separate a first region from a second region in the body region;
• an interlayer insulating film covering a surface of the trench gates;
• emitters spaced apart from each other on a surface of the body region in the first region, the emitters having the second conductivity type
• an emitter electrode on the interlayer insulating film;
• a first body contact overlapping each of the emitters in the first region and in contact with the emitter electrode;
• and
• a second body contact on or at the surface of the body region in the second region and in contact with the emitter electrode,
• wherein the first region includes a first mesa, the second region is adjacent to the first region and includes a second mesa, and the first mesa has a width larger than that of the second mesa.