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US 11,309,410 B2Granted
Semiconductor device having active and inactive semiconductor mesas
AssigneeInfineon Technologies AG
InventorsMaria Cotorogea, Frank Wolter, Hans-Joachim Schulze, Franz-Josef Niedernostheide, Yvonne Gawlina-Schmidl
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Abstract
A semiconductor device is described in which a conductive channel is present along an active gate trench of the device when a gate potential is at an on-voltage, whereas no conductive channel is present along an inactive trench of the device for the same gate potential condition.
Claims21
A semiconductor device, comprising:
- a semiconductor substrate;
- a first active gate trench extending from a first main surface of the semiconductor substrate and into a transistor body region formed in the semiconductor substrate;
- a second active gate trench extending from the first main surface and into the transistor body region;
- and
- a plurality of body trenches extending from the first main surface and into the transistor body region between the first active gate trench and the second active gate trench;
- wherein the first active gate trench, the second active gate trench and the body trenches are arranged as parallel stripes in a cell array,
- wherein an active semiconductor mesa is delimited by each one of the first and the second active gate trenches and the body trench disposed closest to the corresponding active gate trench, and includes a conductive channel that forms in the transistor body region responsive to an on-voltage provided to the cell array,
- wherein an inactive semiconductor mesa is delimited by each adjacent pair of the body trenches, and is devoid of a conductive channel that forms responsive to the on-voltage,
- wherein more inactive semiconductor mesas than active semiconductor mesas are provided per unit cell in the cell array.
6 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a unit cell formed in the semiconductor substrate and comprising:
- a plurality of active gate trenches extending from a first main surface of the semiconductor substrate and into a transistor body region formed in the semiconductor substrate;
- a plurality of body trenches extending from the first main surface and into the transistor body region;
- an active semiconductor mesa adjoining each one of the active gate trenches and having a conductive channel that forms in the transistor body region responsive to an on-voltage provided to the unit cell;
- and
- a plurality of inactive semiconductor mesas each delimited by a pair of trenches and being devoid of a conductive channel that forms responsive to the on-voltage provided to the unit cell,
- wherein more inactive semiconductor mesas than active semiconductor mesas are provided in the unit cell.
5 more elements
Dependencies are inferred from the claim text.