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US 11,309,409 B2Granted
Pseudo Schottky diode
AssigneeNexperia B.V.
InventorTim Böttcher
Life of this patent
Estimating the term…
Abstract
This disclosure relates to a semiconductor device and corresponding method of manufacturing the semiconductor device. The semiconductor device includes a MOS transistor device die and a SiGe diode. The SiGe diode is integrally arranged on the MOS transistor device die, so that the SiGe diode is electrically connected between a source connection and drain connection of the MOS transistor device die.
Claims20
A semiconductor device comprising:
- a trench gate MOS transistor device die comprising a source connection, a drain connection, an epitaxial layer, a plurality of gate trenches, and a plurality of source contacts adjacent to the plurality of gate trenches;
- a body diode, and
- a SiGe diode;
- wherein the SiGe diode comprises a SiGe layer integrally arranged on and in direct contact with each of the epitaxial layer, the body diode, and the plurality of source contacts of the MOS transistor device die between the plurality of gate trenches, so that the SiGe diode is electrically connected in parallel with the body diode between a source connection and a drain connection of the MOS transistor device die.
1 more element
A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming a MOS transistor device die comprising a source connection, a drain connection, an epitaxial layer, a plurality of gate trenches, a plurality of source contacts adjacent to the plurality of gate trenches, a body diode, and a SiGe diode;
- wherein the SiGe diode comprises a SiGe layer integrally formed on and indirect contact with each of the epitaxial layer, the body diode, and the plurality of source contacts of the MOS transistor device die between the plurality of gate trenches, so that the SiGe diode is electrically connected between a source connection and a drain connection of the MOS transistor device die.
Dependencies are inferred from the claim text.