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US 11,309,398 B2Granted
Semiconductor device and manufacturing method for the semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Yen Peng, Te-Yang Lai, Bo-Feng Young, Chih-Yu Chang, Sai-Hooi Yeong, Chi On Chui
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Abstract
The present disclosure provides a semiconductor device, including a substrate, a fin over the substrate, a multilayer gate dielectric stack over the fin, wherein the multilayer gate dielectric stack includes a first ferroelectric layer, and a first dielectric layer coupled to the first ferroelectric layer, and a gate over the multilayer gate dielectric stack.
Claims20
A semiconductor device, comprising:
- a substrate;
- a fin over the substrate;
- a multilayer gate dielectric stack over the fin, wherein the multilayer gate dielectric stack comprises:
- a first ferroelectric layer;
- and
- a first dielectric layer coupled to the first ferroelectric layer, wherein a portion of the first dielectric layer is in direct contact with the first ferroelectric layer, the first ferroelectric layer comprises:
- a first portion made of a ferroelectric material in orthorhombic phase;
- a second portion made of the ferroelectric material in monoclinic phase;
- and
- a third portion made of the ferroelectric material in tetragonal phase, wherein a total volume of the second portion is greater than a total volume of the first portion, and the total volume of the first portion is greater than a total volume of the third portion;
- and
- a gate over the multilayer gate dielectric stack.
9 more elements
A method for forming a semiconductor structure, comprising:
- forming a fin over a substrate;
- forming a multilayer gate dielectric stack over the fin, wherein the multilayer gate dielectric stack comprises a first ferroelectric layer and a first dielectric layer coupled to the first ferroelectric layer, wherein forming the multilayer gate dielectric stack comprises:
- forming a ferroelectric material;
- performing an annealing operation to convert the ferroelectric material from an amorphous state to the first ferroelectric layer having a crystalized state, wherein the ferroelectric layer comprises a first portion with orthorhombic phase, a second portion with monoclinic phase, and a third portion with tetragonal phase, wherein a total volume of the first portion is less than a total volume of the second portion, and the total volume of the first portion is greater than a total volume of the third portion;
- and
- forming a gate over the multilayer gate dielectric stack.
3 more elements
A method for forming a semiconductor structure, comprising:
- forming a fin over a substrate;
- forming a plurality of mandrels over the fin;
- forming a multilayer gate dielectric stack over a surface of the fin exposed from the mandrels, wherein the multilayer gate dielectric stack comprises a first ferroelectric layer and a first dielectric layer coupled to the first ferroelectric layer, wherein the first ferroelectric layer comprises a first portion with orthorhombic phase, a second portion with monoclinic phase, and a third portion with tetragonal phase, wherein a total volume of the first portion is less than a total volume of the second portion, and the total volume of the first portion is greater than a total volume of the third portion;
- forming a gate between two portions of the multilayer gate dielectric stack;
- partially removing an upper portion of the gate, thereby an uppermost surface of the gate is lower than an uppermost surface of the mandrels;
- and
- removing the mandrels.
4 more elements
Dependencies are inferred from the claim text.