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US 11,309,396 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Hao Wu, Zhi-Chang Lin, Ting-Hung Hsu, Kuan-Lun Cheng
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Abstract
A semiconductor device includes a first device formed over a substrate. The first device includes a first gate stack encircling a first nanostructure, and the first device is a logic circuit device. The semiconductor device includes a second device formed over the first device. The second device includes a second gate stack encircling a second nanostructure, and the second device is a static random access memory (SRAM).
Claims20
A semiconductor device, comprising:
- a first device formed over a substrate, wherein the first device comprises a first gate stack encircling a first nanostructure, and the first device is a logic circuit device;
- and
- a second device formed over the first device, wherein the second device comprises a second gate stack encircling a second nanostructure, and the second device is a static random access memory (SRAM),
- wherein the first gate stack comprises a first portion and a second portion, the first portion is next to a sidewall of the second gate stack, and the second portion is directly below the second gate stack.
1 more element
A semiconductor device, comprising:
- a first device formed over a substrate, wherein the first device comprises a plurality of first nanostructures stacked in a vertical direction;
- a second device formed over the first device, wherein the second device comprises a plurality of second nanostructures stacked in the vertical direction, and one of the first and the second device is a p-type device and the other of the first and the second device is an n-type device;
- an isolation structure formed over the substrate;
- and
- a first inner gate spacer extending above the substrate, wherein a top surface of the first inner gate spacer is higher than a top surface of the isolation structure.
2 more elements
A semiconductor device, comprising:
- a first device formed over a substrate, wherein the first device comprises a plurality of first nanostructures stacked and spaced from each other;
- a second device formed over the first device, wherein the second device comprises a plurality of second nanostructures stacked and spaced from each other;
- and
- an inner gate spacer between the first nanostructures and the second nanostructures.
1 more element
Dependencies are inferred from the claim text.