Thin film transistor and method for manufacturing the same, and display panel

A thin film transistor, comprising an active layer and a source-drain electrode layer, wherein the active layer is made of a semiconductor material, the source-drain electrode layer comprises a first electrode and a second electrode, the first electrode comprises at least one first electrode strip, the second electrode comprises at least one second electrode strip, the at least one first electrode strip and the at least one second electrode strip are alternately arranged at intervals,

• at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the first electrode strip, which is proximal to the second electrode, and the second electrode, on the layer where the active layer is located;
• and/or
• at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the second electrode strip, which is proximal to the first electrode, and the first electrode, on the layer where the active layer is located.