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US 11,309,389 B2Granted
Epitaxial wafer and switch element and light-emitting element using same
AssigneeLx Semicon Co., Ltd.
InventorsSeok Min Kang, Ji Hye Kim, Heung Teak Bae
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Abstract
An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.
Claims10
An epitaxial wafer comprising:
- a substrate;
- and
- an epitaxial layer on the substrate, wherein the epitaxial layer includes silicon carbide,
- wherein the epitaxial layer comprises:
- a first semiconductor layer on the substrate, and
- a second semiconductor layer disposed on the first semiconductor and having a thickness thicker than a thickness of the first semiconductor layer,
- wherein a density of a Basal Plane Dislocation (BPD) of the first semiconductor layer is 30/cm2 or less,
- wherein a density of a Etch Pit Density (EPD) of the first semiconductor layer is 3,000/cm2 or less, and
- wherein a ratio of BPD/EPD of the first semiconductor layer is 0.01 or less.
6 more elements
A switch element comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- an anode electrode on the second semiconductor layer;
- and
- a cathode electrode under the substrate,
- wherein the first semiconductor layer and the second semiconductor layer include silicon carbide,
- wherein at least one of the first semiconductor layer and the second semiconductor layer comprises one of 3C-SiC, 4H-SiC and 6H-SiC,
- wherein the second semiconductor layer has a thickness thicker than a thickness of the first semiconductor layer,
- wherein a density of a Basal Plane Dislocation (BPD) of the first semiconductor layer is 30/cm2 or less,
- wherein a density of a Etch Pit Density (EPD) of the first semiconductor layer is 3,000/cm2 or less, and
- wherein a ratio of BPD/EPD of the first semiconductor layer is 0.01 or less.
9 more elements
A light emitting element comprising:
- a substrate;
- an epitaxial layer on the substrate;
- and
- a light emitting structure disposed on the epitaxial layer and including at least a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer,
- wherein the epitaxial layer comprises:
- a first semiconductor layer on the substrate;
- and
- a second semiconductor layer on the first semiconductor layer,
- wherein the first semiconductor layer and the second semiconductor layer include silicon carbide,
- wherein at least one of the first semiconductor layer and the second semiconductor layer comprises one of 3C-SiC, 4H-SiC and 6H-SiC,
- wherein the second semiconductor layer has a thickness thicker than a thickness of the first semiconductor layer,
- wherein a density of a Basal Plane Dislocation (BPD) of the first semiconductor layer is 30/cm2 or less,
- wherein a density of a Etch Pit Density (EPD) of the first semiconductor layer is 3,000/cm2 or less, and
- wherein a ratio of BPD/EPD of the first semiconductor layer is 0.01 or less.
11 more elements
Dependencies are inferred from the claim text.