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US 11,309,384 B2Granted
Super junction semiconductor device and method of manufacturing the same
AssigneeDB HiTek Co., Ltd.
InventorYoung Seok Kim
Life of this patent
Estimating the term…
Abstract
A super junction semiconductor device includes a substrate having a first conductive type, a blocking layer positioned on the substrate, the blocking layer including first conductive type pillars and second conductive type pillars, each extending in a vertical direction and arranging alternatively in a horizontal direction, and a gate structure disposed on the blocking layer, the gate structure extending in the horizontal direction and being electrically connected to ones of the first and second conductive type pillars. Thus, oscillation phenomena may be suppressed.
Claims14
A super junction semiconductor device comprising:
- a substrate having a first conductive type;
- a blocking layer positioned on the substrate, the blocking layer including first conductive type pillars and second conductive type pillars, each extending in a vertical direction and arranged alternatively in a horizontal direction with respect to one another;
- and
- a gate structure disposed on the blocking layer, the gate structure extending in the horizontal direction and electrically connected to ones of the first and second conductive type pillars,
- wherein each pillar of ones of the first conductive type pillars and the second conductive type pillars includes a corresponding plurality of pillar cells stacked and overlapped with one another in the vertical direction such that the plurality of pillar cells of each pillar are electrically interconnected with one another, and each pillar cell has both a maximum width and overlapping widths along the horizontal direction,
- wherein each of the second pillar cells has a spherical shape having a first diameter, and
- wherein the overlapping width of each of the second conductive type cells is smaller than that of the second conductive type pillar cell above it.
4 more elements
A product made by the process of:
- preparing a substrate of a first conductive type;
- forming a blocking layer on the substrate, the blocking layer including first conductive type pillars and second conductive type pillars each extending in a vertical direction and arranged alternatively in a horizontal direction;
- and
- forming a gate structure on the blocking layer, the gate structure extending in the horizontal direction and being electrically connected to one of the first and second conductive type pillars,
- wherein each pillar of ones of the first conductive type pillars and the second conductive type pillars includes a corresponding plurality of pillar cells stacked and overlapped in the vertical direction and electrically interconnected to the other pillar cells of the same pillar, and wherein each pillar has a maximum width and an overlapping widths along the horizontal direction,
- wherein forming the blocking layer comprises:
- (a) forming a first epitaxial layer on the substrate;
- (b) partially removing the first epitaxial layer to form a trench;
- and
- (c) filling the trench to form a plurality of second pillar cells doped with second conductive type impurities to define a plurality of first pillar cells adjacent to the second pillar cells, and
- (d) repeating (a) to (c),
- wherein a second epitaxial layer formed on the first epitaxial layer and the first pillar cells has a thickness lower than that of the first epitaxial layer.
9 more elements
A product made by the process of:
- preparing a substrate of a first conductive type;
- forming a blocking layer on the substrate, the blocking layer including first conductive type pillars and second conductive type pillars each extending in a vertical direction and arranged alternatively in a horizontal direction;
- and
- forming a gate structure on the blocking layer, the gate structure extending in the horizontal direction and being electrically connected to one of the first and second conductive type pillars,
- wherein each pillar of ones of the first conductive type pillars and the second conductive type pillars includes a corresponding plurality of pillar cells stacked and overlapped in the vertical direction and electrically interconnected to the other pillar cells of the same pillar, and wherein each pillar has a maximum width and an overlapping widths along the horizontal direction,
- wherein forming the blocking layer comprises:
- (a) forming a first epitaxial layer on the substrate;
- (b) implanting second conductive type impurities into the first epitaxial layer to form a first pillar cell of the second conductive type in the first epitaxial layer;
- (c) forming a second epitaxial layer on the first epitaxial layer including the first pillar cells;
- and
- (d) implanting second conductive type impurities into the second epitaxial layer to form a second pillar cell of the second conductive type, being connected with the first pillar cell, wherein the first epitaxial layer has a thickness larger than that of the second epitaxial layer.
8 more elements
Dependencies are inferred from the claim text.