Quad-layer high-k for metal-insulator-metal capacitors
AssigneeInternational Business Machines Corporation
InventorsKisik Choi, Takashi Ando, Paul Charles Jamison, John Greg Massey, Eduard Albert Cartier
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Abstract
A semiconductor structure, and a method of making the same includes a multiple electrode stacked capacitor containing a sequence of first metal layers interleaved with second metal layers. A quad-layer stack separates each of the first metal layers from each of the second metal layers, the quad-layer dielectric stack includes a first dielectric layer made of Al2O3, a second dielectric layer made of HfO2, a third dielectric layer made of Al2O3, and a fourth dielectric layer made of HfO2.
Claims25
A method of forming a semiconductor structure, the method comprising:
- forming a multiple electrode stacked capacitor including a sequence of first metal layers interleaved with second metal layers, and separating each of the first metal layers from each of the second metal layers with a quad-layer stack;
- and
- forming the quad-layer dielectric stack using:
- a first dielectric layer comprising Al2O3,
- a second dielectric layer comprising HfO2,
- a third dielectric layer comprising Al2O3, and
- a fourth dielectric layer comprising HfO2.
A method of forming a semiconductor structure, the method comprising:
- forming a first metal layer;
- forming a first quad-layer dielectric stack on a surface of the first metal layer;
- forming a second metal layer on a surface of the first quad-layer dielectric stack;
- forming a second quad-layer dielectric stack disposed on a surface of the second metal layer;
- and
- forming a third metal layer disposed on a surface of the second quad-layer dielectric stack, wherein each of the first quad-layer dielectric stack and the second quad-layer dielectric stack comprises:
- a first dielectric layer comprising Al2O3,
- a second dielectric layer comprising HfO2,
- a third dielectric layer comprising Al2O3, and
- a fourth dielectric layer comprising HfO2.
A semiconductor structure comprising:
- a first metal layer;
- a first quad-layer dielectric stack disposed on a surface of the first metal layer;
- a second metal layer disposed on a surface of the first quad-layer dielectric stack;
- a second quad-layer dielectric stack disposed on a surface of the second metal layer;
- and
- a third metal layer disposed on a surface of the second quad-layer dielectric stack, wherein each of the first quad-layer dielectric stack and the second quad-layer dielectric stack comprises:
- a first dielectric layer comprising Al2O3,
- a second dielectric layer comprising HfO2,
- a third dielectric layer comprising Al2O3, and
- a fourth dielectric layer comprising HfO2.
Dependencies are inferred from the claim text.