Three-dimensional nonvolatile memory device having resistance change structure and method of operating the same

A nonvolatile memory device comprising:

• a substrate having an upper surface;
• a first channel structure and a second channel structure disposed over the substrate, each comprising at least one channel layer pattern and at least one interlayer insulation layer pattern, which are alternately stacked in a first direction perpendicular to the upper surface, and each extending in a second direction perpendicular to the first direction, wherein the first channel structure and the second channel structure are spaced apart from each other in a third direction perpendicular to the first and second directions;
• a first resistance change layer and a first gate insulation layer sequentially disposed on a sidewall surface of the first channel structure along the third direction;
• a second resistance change layer and a second gate insulation layer sequentially disposed on a sidewall surface of the second channel structure along the third direction;
• and
• a plurality of gate line structures disposed over the substrate and disposed between the first channel structure and the second channel structure and extending in the first direction,
• wherein each of the plurality of gate line structures is spaced apart from each other along the second direction.