P-type semiconductor layers coupled to N-type semiconductor layers
AssigneeHewlett-Packard Development Company, L.P.
InventorsNing Ge, Robert Ionescu, Helen A Holder, Jarrid Wittkopf
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AssigneeHewlett-Packard Development Company, L.P.
InventorsNing Ge, Robert Ionescu, Helen A Holder, Jarrid Wittkopf
Estimating the term…
A device includes a P-N junction comprising a monolithic N-type semiconductor layer coupled to a monolithic P-type semiconductor layer. The monolithic N-type semiconductor layer includes a first portion and a second portion. The first portion has a first surface and the second portion has a second surface facing away from the first surface. The monolithic P-type semiconductor layer includes a third portion and a fourth portion. The third portion has a third surface and the fourth portion has a fourth surface facing away from the third surface.
A device comprising:
A device comprising:
A device comprising:
Dependencies are inferred from the claim text.