Integrated circuit photodetector
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
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Abstract
An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
Claims20
An integrated circuit comprising:
- a semiconductor substrate;
- one or more dielectric structures of dielectric material protruding from a surface of the semiconductor substrate;
- and
- a photosensitive material positioned on the semiconductor substrate and covering the one or more dielectric structures, wherein the photosensitive material has an index of refraction that is higher than an index of refraction of the dielectric material of the one or more dielectric structures;
- and
- a layer of dielectric material covering the photosensitive material, the dielectric material of the layer of dielectric material having an index of refraction that is less than an index of refraction of the photosensitive material.
A device, comprising:
- a semiconductor substrate including a plurality of trenches;
- one or more dielectric structures of dielectric material protruding from a bottom surface of each trench;
- a photosensitive material positioned in each trench covering the one or more dielectric structures and having an index of refraction greater than an index of refraction of the dielectric material of the one or more dielectric structures;
- a plurality of lenses each configured to focus light onto the photosensitive material in a respective trench;
- and
- a layer of dielectric material covering the photosensitive material in each trench, the dielectric material of the layer of dielectric material having an index of refraction that is lower than the index of refraction of the photosensitive material.
A method, comprising:
- forming a trench in a semiconductor substrate;
- forming one or more dielectric structures of dielectric material protruding from a bottom surface of the trench;
- depositing a photosensitive material in the trench covering the one or more dielectric structures, wherein the photosensitive material has an index of refraction that is higher than an index of refraction the dielectric material of the one or more dielectric structures;
- and
- depositing a layer of dielectric material on the photosensitive material, wherein the dielectric material of the layer of dielectric material has an index of refraction that is less than the index of refraction of the photosensitive material.
Dependencies are inferred from the claim text.