Imaging element, method of manufacturing imaging element, and electronic apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorTaichi Natori
Life of this patent
Estimating the term…
Loading patent…
AssigneeSony Semiconductor Solutions Corporation
InventorTaichi Natori
Estimating the term…
The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectric conversion of incoming light; a cover glass that protects a top surface side serving as a light incidence surface of the light receiving sensor; a frame that is disposed in an outer peripheral portion between the light receiving sensor and the cover glass, and is formed with use of an inorganic material; and an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame. The present technology is applicable to, for example, an imaging element having a CSP structure, and the like.
An imaging element comprising:
A method of manufacturing an imaging element, the method comprising:
An electronic apparatus provided with an imaging element, the imaging element comprising:
Dependencies are inferred from the claim text.