Dummy vertical transistor structure to reduce cross talk in pixel sensor

A pixel sensor, comprising:

• a substrate comprising a front-side surface opposite a back-side surface;
• a photodetector disposed within the substrate;
• a deep trench isolation (DTI) structure extending into the back-side surface of the substrate such that the photodetector is spaced laterally between a first sidewall of the DTI structure and a second sidewall of the DTI structure;
• a transfer vertical gate electrode underlying the photodetector and extending into the front-side surface of the substrate, wherein the transfer vertical gate electrode is disposed laterally between the first sidewall of the DTI structure and a center of the photodetector;
• and
• a dummy vertical gate electrode underlying the photodetector and extending into the front-side surface of the substrate, wherein the dummy vertical gate electrode is disposed laterally between the second sidewall of the DTI structure and the center of the photodetector.

A pixel sensor, comprising:

• a substrate comprising a front-side surface opposite a back-side surface;
• a photodetector disposed within the substrate;
• a floating diffusion node disposed within the substrate and adjacent to a first side of the photodetector;
• a deep trench isolation (DTI) structure extending from the back-side surface of the substrate to a first point below the back-side surface, wherein the photodetector is spaced laterally between opposing sidewalls of the DTI structure;
• an interconnect structure disposed along the front-side surface of the substrate, wherein the interconnect structure comprises a plurality of conductive vias and a plurality of conductive wires disposed within an interconnect dielectric structure;
• and
• a dummy vertical gate electrode directly underlying the photodetector and extending into the front-side surface of the substrate, wherein the dummy vertical gate electrode is adjacent to a second side of the photodetector opposite the first side.