Display device

A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising:

• a gate insulating film formed on the oxide semiconductor film,
• an aluminum oxide film formed on the gate insulating film,
• a gate electrode formed on the aluminum oxide film,
• a side spacer formed on both sides of the gate electrode, and
• an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source,
• wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film,
• the oxide semiconductor film has a channel, which is formed between the drain and the source,
• an intermediate region is formed between the channel and the drain and between the channel and the source,
• a gate insulating film is formed on the channel and the intermediate region of the oxide semiconductor film,
• the gate electrode is formed on the aluminum oxide film above the channel, and
• a content of hydrogen in the oxide semiconductor film, is:
• in the channel<in the intermediate region<in the drain or the source.

A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising:

• a gate insulating film formed on the oxide semiconductor film,
• an aluminum oxide film formed on the gate insulating film,
• a gate electrode formed on the aluminum oxide film,
• a side spacer formed on both sides of the gate electrode, and
• an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source,
• wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film, and
• a content of hydrogen in the interlayer insulating film is higher than a content of hydrogen in the side spacer.