Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof

A three-dimensional ferroelectric memory device, comprising:

• an alternating stack of insulating layers and electrically conductive layers located over a substrate, wherein each of the electrically conductive layers comprises a transition metal element-containing conductive liner and a conductive fill material portion;
• a vertical semiconductor channel extending vertically through the alternating stack;
• a vertical stack of tubular transition metal element-containing conductive spacers laterally surrounding the vertical semiconductor channel and located at levels of the electrically conductive layers;
• and
• a ferroelectric material layer located between the vertical stack of tubular transition metal element-containing conductive spacers and the transition metal element-containing conductive liner;
• wherein the ferroelectric material layer comprises:
• an upper horizontally-extending portion that contacts a bottom surface of the respective overlying one of the insulating layers and a top surface of a respective electrically conductive layer;
• a lower horizontally-extending portion that contacts a top surface of the respective underlying one of the insulating layers and a bottom surface of the respective electrically conductive layer;
• and
• a tubular portion vertically extending between the upper horizontally-extending portion and the lower horizontally-extending portion, wherein the tubular portion laterally surrounds and contacts a respective one of the tubular transition metal element-containing conductive spacers.