Three-dimensional NOR-type memory device and method of making the same

A method of forming a three-dimensional memory device, comprising:

• forming a vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers;
• forming a plurality of line trenches laterally extending along a first horizontal direction through the vertically alternating sequence;
• forming a line trench fill structure within each of the line trenches by sequentially forming a charge storage layer, a semiconductor channel layer, and a dielectric core within each of the line trenches;
• dividing each line trench fill structure into a respective row of memory stack structures by forming active region openings therethrough;
• forming active region pillars in the active region opening by depositing a doped semiconductor material therein, wherein a plurality of laterally alternating sequences of active region pillars and memory stack structures are formed, each memory stack structure comprising a remaining portion of the line trench fill structures;
• forming backside recesses by removing the sacrificial material layers selective to insulating layers, the memory stack structures, and the active region pillars;
• and
• depositing electrically conductive layers in remaining volumes of the backside recesses.