US 11,309,328 B2 · Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Abstract

A method of forming a microelectronic device comprises forming a microelectronic device structure. The microelectronic device structure comprises a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures, a dielectric structure vertically extending partially through the stack structure, and a dielectric material vertically overlying and horizontally extending across the stack structure and the dielectric structure. Portions of at least the dielectric material and the dielectric structure are removed to form a trench vertically overlying and at least partially horizontally overlapping a remaining portion of the dielectric structure. The trench is substantially filled with additional dielectric material. Microelectronic devices, memory devices, and electronic systems are also described.

Claims12

Dependent claims

A microelectronic device, comprising:

a stack structure comprising vertically alternating conductive structures and insulating structures arranged in tiers, each of the tiers comprising one of the conductive structures and one of the insulating structures;
a trench partially vertically extending through the stack structure and horizontally extending in a first direction, the trench comprising:
a lower portion;
and
an upper portion comprising substantially non-planar horizontal boundaries, the upper portion having at least one a greater horizontal width in a second direction orthogonal to the first direction than the lower portion;
and
at least one dielectric structure within and substantially completely filling the trench.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/667,719Filed 29 Oct 2019

Published

US 2021/0126010 A129 Apr 2021

Granted

19 Apr 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10B 43/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
G11C 16/08
Auxiliary circuits, e.g. for writing into memory: address circuits; Decoders; Word-line control circuits
H10B 41/10
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the top-view layout
H10B 41/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Life of this patent

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Life of this patent

Abstract

Claims12