Vertical semiconductor device

A vertical semiconductor device comprising:

• a vertical structure protruding in a vertical direction on a substrate of a cell block region and including a channel layer;
• a plurality of conductive layer patterns stacked while being spaced apart from each other by a plurality of interlayer insulating layer patterns in the vertical direction;
• and
• a contact plug in contact with a pad region which is at an edge of a first conductive layer pattern of the conductive layer patterns, the pad region including a raised pad portion protruding from a surface of the first conductive layer pattern,
• wherein second conductive layer patterns of the conductive layer patterns have an inclined form in which the horizontal distances from the vertical structure to an end of second conductive layer patterns become shorter as the second conductive layer patterns get farther away from the substrate in the vertical direction, and one end of each of the second conductive layer patterns is rounded, and
• wherein a first interlayer insulating layer pattern of the interlayer insulating patterns comprises a recessed portion recessed from one end of respective adjacent second conductive layer patterns.

A vertical semiconductor device, comprising:

• a plurality of conductive layer patterns being stacked in a vertical structure on a substrate and being spaced apart from each other by a plurality of interlayer insulating layer patterns in the vertical direction;
• and
• a contact plug in contact with a pad region which is at an edge of a first conductive layer pattern of the conductive layer patterns,
• wherein the edge of the first conductive layer pattern includes a raised pad portion in the pad region and through which the contact plug passes, and the raised pad portion is rounded on opposite sides of the contact plug on the first conductive layer pattern,
• wherein second conductive layer patterns of the conductive layer patterns have an inclined form in which the horizontal distances become shorter as the second conductive layer patterns get farther away from the substrate in the vertical direction.