Nonvolatile semiconductor memory device and method of manufacturing the same

A nonvolatile semiconductor memory device, comprising:

• a substrate,
• a stack including a plurality of word line electrodes separated from each other in a first direction perpendicular to the substrate, and a plurality of first selection gate electrodes provided above an upper most electrode among the plurality of word line electrodes and having respective first end surfaces separated from each other in the first direction;
• a semiconductor columnar portion that extends through the plurality of first selection gate electrodes and the plurality of word line electrodes in the first direction;
• a memory film provided between the semiconductor columnar portion and the plurality of word line electrodes;
• a first conducting layer having portions provided in a second direction parallel to the substrate, said portions extending in the first direction and being in conductive contact with the respective first end surfaces of the plurality of first selection gate electrodes separated from each other in the first direction;
• and
• a contact provided at one end of the stack in the second direction and provided on one of the plurality of word line electrodes.