Semiconductor memory device

A semiconductor memory device comprising:

• a semiconductor substrate;
• a laminated body formed by laminating a plurality of electrode layers on the semiconductor substrate;
• a memory film provided in the laminated body and including a first block insulation film disposed in a direction perpendicular to the electrode layers, a charge storage film facing the first block insulation film, a tunnel insulation film facing the charge storage film, and a channel film facing the tunnel insulation film;
• and
• a barrier layer provided an interface in the memory film and mainly composed of carbon, wherein
• the charge storage film includes a first silicon nitride layer facing the first block insulation film, a silicon oxynitride layer facing the first silicon nitride layer, and a second silicon nitride layer facing the silicon oxynitride layer, and
• each of the plurality of electrode layers includes a metal layer, a barrier metal layer that covers the metal layer, and second block insulation film that covers the harrier metal layer, and a carbon concentration of the barrier layer is within the range of 0.1 to 10.0 atomic, and the barrier layer has a thickness equal to or less than 0.5 nanometers, and the barrier layer is provided at interface between the second silicon nitride layer and the tunnel insulation film.