Semiconductor device with landing pad of conductive polymer and method for fabricating the same

Abstract

The present application discloses a semiconductor device with a landing pad of conductive polymer and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a dielectric layer disposed over the substrate, a plug disposed in the dielectric layer, and a landing pad of conductive polymer disposed over the dielectric layer. The method includes: providing a substrate; forming a dielectric layer with a plug over the substrate; performing an etching process to remove a portion of the dielectric layer to expose a protruding portion of the plug; forming a conductive polymer layer covering the dielectric layer and the protruding portion; and performing a thermal process to form a landing pad over the dielectric layer in a self-aligned manner. The landing pad of conductive polymer comprises a protruding portion of the plug, a first silicide layer disposed over the protruding portion, and a second silicide layer disposed on a sidewall of the protruding portion.

Dependencies are inferred from the claim text.