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US 11,309,312 B2Granted
Semiconductor device
AssigneeNanya Technology Corporation
InventorShing-Yih Shih
Life of this patent
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including a center area and a peripheral area surrounding the center area, a first gate stack positioned on the peripheral area of the substrate, and an active column positioned in the center area of the substrate. A top surface of the first gate stack and a top surface of the active column are at a same vertical level.
Claims19
A semiconductor device, comprising:
- a substrate including a center area and a peripheral area surrounding the center area;
- a first gate stack disposed on the substrate and positioned in the peripheral area of the substrate, wherein the first gate stack includes a first gate mask layer to form a top surface of the first gate stack;
- a pair of first gate spacers disposed on the substrate and respectively correspondingly disposed adjacent to two sides of the first gate stack;
- and
- an active column disposed on the substrate and positioned in the center area of the substrate, wherein the active column includes a top doped region to form a top surface of the active column;
- wherein the top surface of the first gate stack, top ends of the pair of first gate spacers and the top surface of the active column are at a same vertical level.
3 more elements
Dependencies are inferred from the claim text.