A solid-state image capturing apparatus, comprising:
- a plurality of substrates;
- a plurality of color filters;
- an insulating film;
- and
- at least two layers configured to laminate the plurality of substrates, wherein
- at least two substrates of the plurality of substrates comprise a plurality of pixels configured to execute photoelectric conversion,
- a first substrate of the at least two substrates comprises a first set of pixels of the plurality of pixels,
- the first substrate is a visible light sensor configured to receive visible light,
- a second substrate of the at least two substrates comprises a second set of pixels of the plurality of pixels,
- the second substrate is a narrow band light sensor,
- the narrow band light sensor is configured to receive narrow band light in a narrow wavelength band of a plurality of narrow wavelength bands, based on a position of the narrow band light sensor,
- a pass band of a first narrow wavelength band of the plurality of narrow wavelength bands is different from a passband of a second narrow wavelength band of the plurality of narrow wavelength bands,
- a light receiving surface of the narrow band light sensor comprises a plurality of regions,
- each region of the plurality of regions of the light receiving surface receives light corresponding to one narrow wavelength band of the plurality of narrow wavelength bands,
- one of the visible light sensor or the narrow band light sensor includes a plurality of transparent materials,
- one of the first set of pixels or the second set of pixels is the plurality of transparent materials,
- each of the plurality of transparent materials includes silicon (Si),
- the narrow band light sensor includes a filter layer comprising a plurality of narrow band filters,
- a number of narrow band filters in the plurality of narrow band filters is same as a number of photodiodes (PDs) in a plurality of PDs of the second substrate,
- the visible light sensor includes a first semiconductor layer, a first poly layer, and a first wiring layer,
- the insulating film is between the plurality of color filters and an upper surface of the first semiconductor layer,
- the insulating film is in contact with the plurality of color filters and the upper surface of the first semiconductor layer,
- the first wiring layer includes a light shielding layer in a first part of the first wiring layer other than a second part of the first wiring layer,
- the second part of the first wiring layer corresponds to an upper part of the plurality of PDs of the second substrate,
- the narrow band light sensor includes a second semiconductor layer, a second poly layer, and a second wiring layer,
- the second wiring layer includes a plurality of wirings in a first region of the second wiring layer,
- a second region of the filter layer includes the plurality of narrow band filters,
- the first region of the second wiring layer is non-overlapping with the second region of the filter layer,
- the first region of the second wiring layer overlaps a third region of the second semiconductor layer,
- the third region is between a first PD of the plurality of PDs and a second PD of the plurality of PDs, and
- the first semiconductor layer, the first poly layer, the first wiring layer, the plurality of narrow band filters, the second wiring layer, the second poly layer, and the second semiconductor layer are stacked in this order.