Back to results
US 11,309,267 B2Granted
Semiconductor device including uneven contact in passivation layer and method of manufacturing the same
AssigneeWinbond Electronics Corp.
InventorsYen-Jui Chu, Jin-Neng Wu
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.
Claims9
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming a passivation layer on the substrate by a first 3D printing technology, wherein the first 3D printing technology comprises:
- ejecting an insulation ink onto the substrate;
- and
- performing a curing step to cure the insulation ink into the passivation layer, wherein after the curing step, the passivation layer forms an opening with an uneven sidewall;
- and
- after forming the passivation layer by the first 3D printing technology, forming a connector in the opening by a second 3D printing technology.
4 more elements
Dependencies are inferred from the claim text.