US 11,309,266 B2 · Semiconductor device structure with air gap and method for forming the same

Abstract

The present disclosure discloses a semiconductor device structure with an air gap for reducing capacitive coupling and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive pad over a first semiconductor substrate, and a first conductive structure over the first conductive pad. The semiconductor device structure also includes a second conductive structure over the first conductive structure, and a second conductive pad over the second conductive structure. The second conductive pad is electrically connected to the first conductive pad through the first and the second conductive structures. The semiconductor device structure further includes a second semiconductor substrate over the second conductive pad, a first passivation layer between the first and the second semiconductor substrates and covering the first conductive structure, and a second passivation layer between the first passivation layer and the second semiconductor substrate. The first and the second passivation layers surround the second conductive structure, and a first air gap is enclosed by the first and the second passivation layers.

Claims19

Dependent claims

A semiconductor device structure, comprising:

a first conductive pad over a first semiconductor substrate;
a first conductive structure over the first conductive pad;
a second conductive structure over the first conductive structure;
a second conductive pad over the second conductive structure, wherein the second conductive pad is electrically connected to the first conductive pad through the first conductive structure and the second conductive structure;
a second semiconductor substrate over the second conductive pad;
a first passivation layer between the first semiconductor substrate and the second semiconductor substrate and covering the first conductive structure;
and
a second passivation layer between the first passivation layer and the second semiconductor substrate, wherein the first passivation layer and the second passivation layer surround the second conductive structure, and a first air gap is enclosed by the first passivation layer and the second passivation layer;
wherein the first passivation layer covers a top surface and a sidewall of the first conductive structure.

6 more elements

A method for forming a semiconductor device structure, comprising:

forming a first semiconductor structure, comprising:
forming a first passivation layer to cover a first conductive structure over a first semiconductor substrate;
and
forming a first energy removable structure over the first passivation layer;
and
forming a second semiconductor structure, comprising:
forming a second conductive structure and a second passivation layer over a second semiconductor substrate, wherein the second conductive structure protrudes from the second passivation layer;
and
bonding the second semiconductor structure to the first semiconductor structure with the second passivation layer facing the first passivation layer;
and
performing a heat treatment process to transform the first energy removable structure into a first air gap enclosed by the first passivation layer and the second passivation layer.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device structure with air gap and method for forming the same

Life of this patent

Semiconductor device structure with air gap and method for forming the same

Life of this patent

Abstract

Claims19