Semiconductor device package
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorWen Hung Huang
Life of this patent
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Abstract
The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.
Claims20
A semiconductor device package, comprising:
- an antenna layer having a first coefficient of thermal expansion (CTE);
- a first circuit layer disposed over the antenna layer, the first circuit layer having a second CTE;
- and
- a second circuit layer disposed over the antenna layer, the second circuit layer having a third CTE,
- wherein a difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.
A semiconductor device package, comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a first circuit layer disposed on the first surface of the substrate, the first circuit layer having a first conductive layer and a first dielectric layer at least partially covering the first conductive layer;
- and
- a second circuit layer disposed on the first surface of the substrate, the second circuit layer having a second conductive layer and a second dielectric layer at least partially covering the second conductive layer,
- wherein a dielectric constant (Dk) of the first dielectric layer is less than a Dk of the second dielectric layer.
Dependencies are inferred from the claim text.