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US 11,309,257 B2Granted
Semiconductor apparatus for detecting or oscillating electromagnetic waves
AssigneeCanon Kabushiki Kaisha
InventorsToshifumi Yoshioka, Noriyuki Kaifu
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Abstract
A semiconductor apparatus comprising: an element substrate including a plurality of semiconductor devices which detect or oscillate terahertz waves; and an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the terahertz waves in the element substrate and formed of a conductive material, wherein a line width of the electromagnetic shielding is not more than a wavelength of the terahertz waves.
Claims11
A semiconductor apparatus comprising:
- an element substrate including a plurality of semiconductor devices which detect or oscillate terahertz waves;
- and
- an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the terahertz waves in the element substrate and formed of a conductive material, wherein
- a line width of the electromagnetic shielding is not more than a wavelength of the terahertz waves, and
- a width of each opening portion of the electromagnetic shielding is at least the wavelength of the terahertz waves.
2 more elements
A semiconductor apparatus comprising:
- an element substrate including a plurality of semiconductor devices which detect or oscillate predetermined electromagnetic waves;
- and
- an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the predetermined electromagnetic waves in the element substrate and formed of a conductive material, wherein
- a wavelength of the predetermined electromagnetic waves is in a range of 0.1 mm to 1 mm,
- a line width of the electromagnetic shielding is not more than 1 mm, and
- a width of each opening portion of the electromagnetic shielding is at least the wavelength of the predetermined electromagnetic waves.
3 more elements
Dependencies are inferred from the claim text.