Package structure and method for manufacturing the same

A package structure, comprising:

• a first conductive structure including at least one dielectric layer and at least one circuit layer in contact with the dielectric layer;
• a second conductive structure bonded to the first conductive structure, the second conductive structure including at least one dielectric layer and at least one circuit layer in contact with the dielectric layer, wherein a distribution density of the circuit layer of the first conductive structure is greater than a distribution density of the circuit layer of the second conductive structure;
• a protection layer between the first conductive structure and the second conductive structure, wherein a portion of the protection layer contacts a lateral peripheral surface of the second conductive structure and has a width increasing along a direction towards the first conductive structure;
• and
• a semiconductor device electrically connected to the first conductive structure, wherein the semiconductor device is closer to the first conductive structure than the second conductive structure is.

A method for manufacturing a package structure, comprising:

• (a) forming a first conductive structure including at least one dielectric layer and at least one circuit layer in contact with the dielectric layer, wherein the first conductive structure further includes at least one unit;
• (b) forming at least one second conductive structure including at least one dielectric layer and at least one circuit layer in contact with the dielectric layer, wherein a distribution density of the circuit layer of the first conductive structure is greater than a distribution density of the circuit layer of the second conductive structure, and a size of the second conductive structure is less than a size of the unit of the first conductive structure;
• (c) bonding the at least one second conductive structure to the unit of the first conductive structure;
• and
• (e) electrically connecting at least one semiconductor device to the first conductive structure, wherein the at least one semiconductor device is closer to the first conductive structure than the second conductive structure is.