Semiconductor device, and associated method and system

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a transistor layer on a first side of the substrate, the transistor layer including a plurality of active regions for forming transistors;
• forming a conductive strip, on a first active region, extending toward to a second active region for signal connection;
• forming a dielectric layer on the transistor layer, covering the connecting strip;
• and forming a power grid structure on a second side of the substrate opposite to the first side, the power grid structure arranged to direct a power source to the transistor layer;
• wherein forming the transistor layer on the first side of the substrate comprises:
• forming a first cell including the first active region;
• and
• forming a second cell including the second active region;
• and forming the conductive strip, on the first active region comprises:
• forming the conductive strip extending across a boundary between the first cell and the second cell.

A system, comprising:

• a storage device, arranged to store a program code;
• and
• a processor, when executed and loaded by the processor, the program code instructs the processor to execute following operations:
• providing a substrate;
• forming a transistor layer on a first side of the substrate, the transistor layer including a plurality of active regions for forming transistors;
• forming a conductive strip, on a first active region, extending toward to a second active region for signal connection;
• forming a dielectric layer on the transistor layer, covering the connecting strip;
• and forming a power grid structure on a second side of the substrate opposite to the first side, the power grid structure arranged to direct a power source to the transistor layer;
• wherein forming the transistor layer on the first side of the substrate comprises:
• forming a first cell including the first active region;
• and
• forming a second cell including the second active region;
• and forming the conductive strip, on the first active region comprises:
• forming the conductive strip extending across a boundary between the first cell and the second cell.