Conductive rail structure for semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Bo Liao, Wei Ju Lee, Cheng-Ting Chung, Hou-Yu Chen, Chun-Fu Cheng, Kuan-Lun Cheng
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Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first vertical structure and a second vertical structure formed over the substrate, and a conductive rail structure between the first and second vertical structures. A top surface of the conductive rail structure can be substantially coplanar with top surfaces of the first and the second vertical structures.
Claims20
A method for forming a semiconductor structure, comprising:
- forming a fin structure, extending along a first horizontal direction, over a substrate;
- forming a conductive rail structure, extending along the first horizontal direction, adjacent to the fin structure;
- forming a source/drain epitaxial region over the fin structure and in contact with a sidewall of the conductive rail structure;
- and
- forming a metal gate structure, extending along a second horizontal direction, over the fin structure and the conductive rail structure.
A method for forming a semiconductor structure, comprising:
- forming a first group of fin structures and a second group of fin structures over a substrate, wherein the first and second groups of fin structures extend along a first horizontal direction;
- forming a conductive rail structure, extending along the first horizontal direction, between the first and second groups of fin structures;
- forming a source/drain epitaxial region over the first and second groups of fin structures and in contact with the conductive rail structure;
- and
- forming a sacrificial gate structure, extending along a second horizontal direction, over the first and second groups of fin structures and the conductive rail structure.
A method, comprising:
- forming a shallow trench isolation (STI) region between fin structures;
- depositing a padding layer on the STI region and on a sidewall of the fin structures;
- depositing an insulating liner on the padding layer;
- depositing a conductive layer on the insulating liner;
- forming a capping layer on the conductive layer and on a sidewall of the insulating liner;
- and
- forming a source/drain epitaxial region over a portion of the fin structures and in contact with a sidewall of the insulating liner.
The method of 16, further comprising removing a sidewall portion of the padding layer.
The method of 16, wherein forming the source/drain epitaxial region comprises forming a void structure between the source/drain epitaxial region and a sidewall portion of the insulating liner.
The method of 18, further comprising forming a metal gate structure over an other portion of the fin structures and over the void structure.
The method of 18, further comprising forming a metal contact in contact with the source/drain epitaxial region and over the void structure.
Dependencies are inferred from the claim text.