Semiconductor device

A semiconductor device comprising:

• a heat sink;
• a semiconductor chip fixed to the heat sink with a fixing material;
• a lead connected to the semiconductor chip via a wire;
• and
• mold resin that is provided on the heat sink so as to cover a part of the lead, the wire, and the semiconductor chip and has a glass transition temperature of 195° C. or more, wherein
• roughened plating having a surface roughness of RMS=150 nm or more is provided on a surface overlapping the mold resin in the heat sink and a surface overlapping the mold resin in the lead,
• the fixing material is solder or sintered silver,
• a water absorption rate of the mold resin is 0.24% or less,
• the semiconductor chip is formed of a wide bandgap semiconductor material, and
• a thermal decomposition starting temperature of the mold resin is 300° C. or more.

A semiconductor device comprising:

• a heat sink;
• a semiconductor chip fixed to the heat sink with a fixing material;
• a lead connected to the semiconductor chip via a wire;
• and
• mold resin that is provided on the heat sink so as to cover a part of the lead, the wire, and the semiconductor chip and has a glass transition temperature of 195° C. or more, wherein
• roughened plating having a surface roughness of RMS=150 nm or more is provided on a surface overlapping the mold resin in the heat sink and a surface overlapping the mold resin in the lead,
• the fixing material is solder or sintered silver,
• a water absorption rate of the mold resin is 0.24% or less,
• materials of the heat sink and the lead are copper, copper molybdenum alloy, copper tungsten alloy, or aluminum, and
• a coefficient of linear expansion of the mold resin is in a range of 9 to 19 ppm.

A semiconductor device comprising:

• a heat sink;
• a semiconductor chip fixed to the heat sink with a fixing material;
• a lead connected to the semiconductor chip via a wire;
• and
• mold resin that is provided on the heat sink so as to cover a part of the lead, the wire, and the semiconductor chip and has a glass transition temperature of 195° C. or more, wherein
• roughened plating having a surface roughness of RMS=150 nm or more is provided on a surface overlapping the mold resin in the heat sink and a surface overlapping the mold resin in the lead,
• the fixing material is solder or sintered silver,
• a water absorption rate of the mold resin is 0.24% or less, and
• grooves extending so as to surround the semiconductor chip are provided at four corners of the surface of the heat sink.