Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising:

• dividing a semiconductor wafer including a plurality of chip areas which each have a columnar electrode and dicing areas which demarcate the plurality of chip areas, along the dicing areas to separate the plurality of chip areas and thus form a plurality of semiconductor chips;
• sticking a first resin film on the plurality of semiconductor chips from a first surface side having the columnar electrodes, of the semiconductor wafer while filling parts of the first resin film in gaps that art each present between adjacent ones of the plurality of semiconductor chips;
• dividing the first resin film into parts corresponding to the plurality of semiconductor chips by forming trenches narrower in width than the gaps in the first resin film that is filled in the gaps while leaving the first resin film on side surfaces of the divided semiconductor chips;
• and
• sequentially picking up the plurality of semiconductor chips each having a part of the divided first resin film and mounting the picked semiconductor chip on a substrate with the first resin film therebetween while joining the columnar electrode of the semiconductor chip to an electrode of the substrate,
• wherein the sticking and filling the first resin film includes:
• sticking the first resin film on the plurality of semiconductor chips under a reduced pressure;
• and
• filling the parts of the first resin film in the gaps by exposing the plurality of semiconductor chips on which the first resin film is stuck to an atmosphere.

A method for manufacturing a semiconductor device comprising:

• dividing a semiconductor wafer including a plurality of chip areas which each have a columnar electrode and dicing areas which demarcate the plurality of chip areas, along the dicing areas to separate the plurality of chip areas and thus form a plurality of semiconductor chips;
• sticking a first resin film on the plurality of semiconductor chips from a first surface side having the columnar electrodes, of the semiconductor wafer while filling parts of the first resin film in gaps that are each present between adjacent ones of the plurality of semiconductor chips;
• dividing the first resin film into parts corresponding to the plurality of semiconductor chips by forming trenches narrower in width than the gaps in the first resin film that is filled in the gaps while leaving the first resin film on side surfaces of the divided semiconductor chips;
• and
• sequentially picking up the plurality of semiconductor chips each having a part of the divided first resin film and mounting the picked semiconductor chip on a substrate with the first resin film therebetween while joining the columnar electrode of the semiconductor chip to an electrode of the substrate,
• wherein the dividing the semiconductor wafer includes:
• irradiating a second surface, opposite to the first surface, of the semiconductor wafer with laser light along the dicing areas to form modified layers;
• grinding the second surface of the semiconductor wafer;
• sticking a second resin film on the ground second surface of the semiconductor wafer;
• and
• expanding the second resin film in a planar direction of the second resin film to divide the semiconductor wafer.