Method for manufacturing semiconductor structure

A method for manufacturing a semiconductor structure, the method comprising:

• providing a semiconductor substrate having a doped semiconductor region;
• forming a dielectric layer over the semiconductor substrate;
• forming a trench exposing the doped semiconductor region in the dielectric layer, wherein the trench includes a sidewall;
• forming a capping layer in the trench;
• forming a sacrificial layer over the capping layer;
• and
• removing the sacrificial layer along with a portion of the capping layer from the sidewall of the trench.

A method for manufacturing a semiconductor structure, the method

• comprising:
• forming a dielectric layer having a trench, wherein the trench includes a bottom and a sidewall;
• forming a conductive layer in the trench, wherein the conductive layer comprises a conductive portion over the sidewall of the trench;
• forming a sacrificial layer over the conductive layer, wherein the forming of the sacrificial layer comprises:
• forming a metal layer over the conductive layer in a physical vapor deposition chamber;
• and
• exposing the metal layer to an oxygen-containing environment to form a metal oxide layer as the sacrificial layer, wherein a first thickness of the sacrificial layer over the bottom of the trench is thicker than a second thickness of the sacrificial layer over the sidewall of the trench;
• and
• removing the sacrificial layer along with the conductive portion from the sidewall of the trench.