Self aligned buried power rail
AssigneeGlobalFoundries U.S. Inc.
InventorsNicholas V. Licausi, Guillaume Bouche, Lars W. Liebmann
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.
Claims20
A structure comprising:
- a substrate comprising semiconductor material;
- a partial fin structure of comprising semiconductor material of the substrate and comprising a first dimension;
- at least one additional fin structure comprising the semiconductor material of the substrate, and having a second dimension different than the first dimension;
- gap fill insulator material separating and between the partial fin structure and the at least one additional fin structure;
- a buried power rail comprising conductive metal fill material aligned with and over the partial fin structure and adjacent to the at least one additional fin structure;
- and
- a contact to the buried power rail.
Dependencies are inferred from the claim text.