Wafer stage and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKazuyuki Tomizawa, Masashi Kikuchi, Michio Ishikawa, Takafumi Noguchi, Kazuhiro Yamamuro
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AssigneeSamsung Electronics Co., Ltd.
InventorsKazuyuki Tomizawa, Masashi Kikuchi, Michio Ishikawa, Takafumi Noguchi, Kazuhiro Yamamuro
Estimating the term…
A wafer stage includes an electrostatic chuck (ESC) plate, an upper supporting plate, a lower supporting plate and a temperature controller. The ESC plate includes a first surface that supports a wafer. The upper supporting plate is bonded to a second surface of the ESC plate opposite to the first surface. The lower supporting plate overlaps the upper supporting plate. The temperature controller is disposed between the upper supporting plate and the lower supporting plate. The ESC plate includes ceramics. The upper supporting plate includes a composite material of aluminum or aluminum alloy and ceramics or carbon. The ESC plate and the upper supporting plate are directly bonded to each other by a room temperature solid bonding process. Thus, the wafer stage has sufficient strength to withstand pressure differences between a vacuum and atmospheric pressure, improved temperature response by minimizing heat capacity, and prevents warpage of the ESC plate.
A wafer stage comprising:
A method of manufacturing a wafer stage, the wafer stage being an electrostatic chuck (ESC) plate that includes a first surface on which a wafer is placed, an upper supporting plate bonded to a second surface of the ESC plate opposite to the first surface, a lower supporting plate that overlaps the upper supporting plate, and a temperature controller disposed between the upper supporting plate and the lower supporting plate, wherein the ESC plate comprises a material that includes ceramics, and the upper supporting plate comprises a composite material of aluminum or aluminum alloy and ceramics or carbon, the method comprising:
A wafer stage comprising:
Dependencies are inferred from the claim text.