Method of forming dice and structure of die
AssigneeVanguard International Semiconductor Corporation
InventorsHsiu-Mei Yu, Wei-Chan Chang, Chang-Sheng Lin, Chun-Yi Wu
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Abstract
A method of forming dice includes the following steps. First, a wafer structure is provides, which includes a substrate and a stack of semiconductor layers disposed in die regions and a scribe line region. Then, the substrate and the stack of the semiconductor layers in the scribe line region are removed to forma groove in the substrate. After the formation of the groove, the substrate is further thinned to obtain the substrate with a reduced thickness. Finally, a separation process is performed on the substrate with the reduced thickness.
Claims6
A die structure having a high-electron mobility transistor device, comprising:
- a substrate having a first thickness, wherein the substrate is a ceramic substrate comprising aluminum nitride, silicon carbide, aluminum oxide, or a combination thereof;
- a stack of semiconductor layers disposed on the substrate, the stack of the semiconductor layers having a second thickness, wherein a ratio of the second thickness to the first thickness is from 0.004 to 0.5;
- at least one isolation layer disposed between the substrate and the stack of semiconductor layers;
- a silicon-containing bonding layer disposed between the substrate and the stack of semiconductor layers;
- and
- a component layer disposed on the stack of semiconductor layers, wherein the component layer comprises at least a gate electrode, a source electrode and a drain electrode,
- wherein a portion of the sidewall of the substrate comprises a first steepness, and
- a portion of the sidewall of the stack of the semiconductor layers comprises a second steepness, wherein the first steepness is greater than the second steepness.
Dependencies are inferred from the claim text.