Heating element, substrate processing apparatus and method of manufacturing semiconductor device
AssigneeKokusai Electric Corporation
InventorsYoshihiko Yanagisawa, Yukitomo Hirochi
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AssigneeKokusai Electric Corporation
InventorsYoshihiko Yanagisawa, Yukitomo Hirochi
Estimating the term…
Described herein is a technique capable of processing a substrate uniformly using microwaves. According to one aspect of the technique of the present disclosure, there is provided a heating element used in a substrate processing apparatus configured to heat a substrate supported by a substrate retainer by microwaves and process the substrate, the heating element including a dielectric material of an annular shape capable of generating heat by the microwaves. An inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer without contacting the substrate.
A substrate retainer configured to support a heating element used in a substrate processing apparatus configured to heat a substrate supported by the substrate retainer by microwaves and process the substrate, the heating element comprising:
A substrate processing apparatus comprising:
A method of manufacturing a semiconductor device comprising:
Dependencies are inferred from the claim text.