Method for modifying substrates based on crystal lattice dislocation density

A method, comprising:

• providing a donor substrate having crystal lattice planes which are inclined relative to a planar major surface, the planar major surface forming a boundary of the donor substrate in a longitudinal direction of the donor substrate, with a crystal lattice plane normal being inclined in a first direction relative to a major-surface normal;
• introducing laser radiation into an interior of the donor substrate by way of the major surface, such that a physical property of the donor substrate is altered in a region of at least one laser focus which is formed by laser beams emitted by a laser, the alteration of the physical property forming a structure through alteration of the site of penetration of the laser radiation into the donor substrate, a section of the structure that extends in a straight line being generated parallel to the major surface and extending in a second direction which, relative to the first direction, is inclined at an angle which is other than 90° , the altered physical property causing subcritical cracks to form in the donor substrate;
• and
• removing a solid-state layer from the donor substrate by connecting the subcritical cracks in the donor substrate.