Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJian-Jou Lian, Chun-Neng Lin, Chieh-Wei Chen, Tzu-Ang Chiang, Ming-Hsi Yeh
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Abstract
In a wet etching process to pattern a metal layer such as a p-metal work function layer over a dielectric layer such as a high-k gate dielectric layer, a selectivity of the wet etching solution between the metal layer and the dielectric layer is increased utilizing an inhibitor. The inhibitor includes such inhibitors as a phosphoric acid, a carboxylic acid, an amino acid, or a hydroxyl group.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a p-metal work function layer over a dielectric layer;
- and
- applying a wet etching solution to the p-metal work function layer to remove a portion of the p-metal work function layer, wherein applying the wet etching solution forms a protective layer on an exposed surface of the dielectric layer after the portion of the p-metal work function layer has been removed, the wet etching solution comprising:
- a metal etchant;
- an inhibitor for the dielectric layer;
- and
- a solvent.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a first p-work function layer onto a high-k dielectric layer;
- and
- etching the first p-work function layer with a wet etching solution to expose a first portion of the high-k dielectric layer, wherein the wet etching solution comprises an inhibitor for the high-k dielectric layer, wherein the high-k dielectric layer reacts with the wet etching solution to form a protective layer on the high-k dielectric layer.
A method of manufacturing a semiconductor device, the method comprising:
- dispensing an etching solution over a p-metal work function material, the p-metal work function material being on a dielectric layer, wherein dispensing the etching solution etches the p-metal work function material to expose a portion of the dielectric layer, the etching solution forming a protective layer on the portion of the dielectric layer, the etching solution comprising:
- a solvent;
- a first metal etchant;
- an oxidizer;
- and
- an inhibitor comprising one or more of a phosphoric acid, a carboxylic acid, or an amino acid, the inhibitor being for the dielectric layer.
Dependencies are inferred from the claim text.