Methods of forming silicide contact in field-effect transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hsiung Lin, Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang
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Abstract
A semiconductor structure includes a semiconductor fin disposed over a substrate, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the epitaxial S/D feature, the silicide layer is disposed on sidewalls of the epitaxial S/D feature, a dielectric layer disposed over sidewalls of the silicide layer, and an S/D contact disposed over the epitaxial S/D feature in an interlayer dielectric (ILD) layer.
Claims20
A semiconductor structure, comprising:
- a semiconductor fin disposed over a substrate;
- an epitaxial source/drain (S/D) feature disposed over the semiconductor fin;
- a silicide layer disposed over the epitaxial S/D feature, wherein the silicide layer is disposed on sidewalls of the epitaxial S/D feature;
- a dielectric layer disposed over sidewalls of the silicide layer;
- and
- an S/D contact disposed over the epitaxial S/D feature in an interlayer dielectric (ILD) layer.
A semiconductor structure, comprising:
- a fin including a stack of semiconductor layers disposed over a substrate;
- an epitaxial source/drain (S/D) feature disposed over a portion of the fin;
- a silicide layer wrapped around sidewalls of the epitaxial S/D feature;
- a gate structure disposed over the substrate, wherein the gate structure includes a top portion disposed over the fin and a bottom portion interleaved with the stack of semiconductor layers;
- and
- an S/D contact disposed adjacent to the gate structure, wherein the S/D contact contacts the silicide layer.
A semiconductor structure, comprising:
- a semiconductor fin protruding from a substrate;
- isolation features disposed over the substrate and surrounding a bottom portion of the semiconductor fin;
- an epitaxial source/drain (S/D) feature disposed over the semiconductor fin;
- a silicide layer wrapping around the epitaxial S/D feature;
- a contact etch-stop layer (CESL) disposed over the silicide layer;
- an interlayer dielectric (ILD) layer disposed over the CESL;
- and
- an S/D contact embedded in the ILD layer, wherein the S/D contact contacts the silicide layer.
Dependencies are inferred from the claim text.