Loading patent…
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasahiro Watanabe, Takuya Handa, Yasuharu Hosaka, Kenichi Okazaki, Shunpei Yamazaki
Estimating the term…
To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus is capable of forming a semiconductor film and includes a deposition chamber, a gas supply device connected to the deposition chamber, a gas refining device connected to the gas supply device, a vacuum pump for evacuating the deposition chamber, a target disposed in the deposition chamber, and a cathode disposed to face the target. The gas supply device is configured to supply at least one of an argon gas, an oxygen gas, and a nitrogen gas. The partial pressure of hydrogen molecules is lower than or equal to 0.01 Pa and the partial pressure of water molecules is lower than or equal to 0.0001 Pa in the deposition chamber.
A method for forming an oxide semiconductor film, comprising:
A method for forming an oxide semiconductor film, comprising:
A method for forming an oxide semiconductor film, comprising:
A method for forming an oxide semiconductor film, comprising:
Dependencies are inferred from the claim text.