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US 11,309,139 B2Granted
Bifacial light-harvesting dye-sensitized solar cell
AssigneeNational Cheng Kung University
InventorsYuh-Lang Lee, I-Ping Liu, Yu-Syuan Cho
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Abstract
A bifacial light-harvesting dye-sensitized solar cell is provided and has: a first transparent substrate, a second transparent substrate, a working electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a counter electrode, a light-transmitting catalyst layer, and a liquid electrolyte. A photoelectric conversion efficiency of the dye-sensitized solar cell is improved by using a specific working electrode structure.
Claims2
A bifacial light-harvesting dye-sensitized solar cell, comprising:
- a first transparent substrate;
- a second transparent substrate, wherein a receiving space is formed between the second transparent substrate and the first transparent substrate;
- a working electrode disposed on the first transparent substrate and located inside the receiving space;
- exactly three semiconductor layers consisting of a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, wherein:
- the first semiconductor layer is disposed on the working electrode and located inside the receiving space, wherein the first semiconductor layer has a first thickness and comprises a plurality of first semiconductor particles, and the plurality of first semiconductor particles have a first average particle diameter, wherein the first average particle diameter is between 21 and 25 nm, and the first thickness is between 1 and 2.73 μm;
- the second semiconductor layer is disposed on the first semiconductor layer and located inside the receiving space, wherein the second semiconductor layer has a second thickness and comprises a plurality of second semiconductor particles, and the plurality of second semiconductor particles have a second average particle diameter, wherein the second average particle diameter is between 410 and 450 nm, and the second thickness is between 1 and 2.73 μm;
- and
- the third semiconductor layer is disposed on the second semiconductor layer and located inside the receiving space, wherein the third semiconductor layer has a third thickness and comprises a plurality of third semiconductor particles, and the plurality of third semiconductor particles have a third average particle diameter, wherein the third average particle diameter is between 15 and 18 nm, wherein the third thickness is between 6.51 and 7 μm;
- a counter electrode disposed on the second transparent substrate and located inside the receiving space;
- a light-transmitting catalyst layer disposed on the counter electrode and located inside the receiving space, wherein material of the light-transmitting catalyst layer comprises platinum, and a thickness of the light-transmitting catalyst layer is between 5 and 15 nm;
- and
- a liquid electrolyte filled in the receiving space.
9 more elements
Dependencies are inferred from the claim text.