Magnetoresistance effect element
AssigneeTDK Corporation
InventorKatsuyuki Nakada
Life of this patent
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Abstract
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure, the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure, and the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms.
Claims15
A magnetoresistance effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer;
- wherein
- at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure,
- the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure, and
- the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms,
- wherein the functional material is one or more of atoms selected from the group consisting of B and C,
- the metal compound has a crystal structure of an A2 structure, a C1b structure or a B2 structure.
A magnetoresistance effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer;
- wherein
- at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure,
- the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure;
- and
- the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms, wherein
- the functional material is nitrogen, and
- a composition proportion of the functional material in the metal compound is 0.09 at % or more and 7.2 at % or less,
- the metal compound has a crystal structure of an A2 structure, a C1b structure or a B2 structure,
- the functional material penetrates between lattices of the half-Heusler type crystal structure.
A magnetoresistance effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer;
- wherein
- at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure,
- the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure;
- and
- the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms, wherein
- the functional material is fluorine, and
- a composition proportion of the functional material in the metal compound is 0.13 at % or more and 7.2 at % or less.
A magnetoresistance effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer;
- wherein
- at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure,
- the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure;
- and
- the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms, wherein
- the functional material is one or more of atoms selected from the group consisting of Li, Be, O, Na and Mg.
Dependencies are inferred from the claim text.