Method of controlling repair of volatile memory device and storage device performing the same

A method of controlling repair of a volatile memory device included in a storage device, the method comprising:

• setting a test operation condition of the volatile memory device for a test operation such that an error probability is increased based on the test operation condition, compared to a normal operation condition for a normal operation of the volatile memory device, the test operation condition and the test operation being set based on a manufacturer, and the normal operation condition and the normal operation being set based on a standard specification;
• setting a test mode with respect to a test object region corresponding to at least a portion of a memory cell array included in the volatile memory device;
• setting a normal mode with respect to a normal region of the memory cell array other than the test object region;
• performing the test operation of the volatile memory device on the test object region based on the test operation condition during the test mode to detect error position information of errors in data stored in the test object region;
• performing the normal operation of the volatile memory device on the normal region based on the normal operation condition during the normal mode;
• generating accumulated error information by accumulating the error position information during performing the test operation repeatedly;
• identifying error attribute information based on the accumulated error information, the error attribute information indicating correlation between the errors and a structure of the volatile memory device;
• and
• performing a runtime repair operation with respect to the volatile memory device based on the accumulated error information and the error attribute information.

A storage device comprising:

• a nonvolatile memory device;
• and
• a storage controller including a volatile memory device, the storage controller configured to control an access to the nonvolatile memory device and the volatile memory device,
• wherein the storage controller includes an error check and correction (ECC) engine configured to perform error detection and correction with respect to access data of the volatile memory device, and
• wherein the storage controller is further configured to:
• set a test operation condition of the volatile memory device for a test operation such that an error probability is increased based on the test operation condition, compared to a normal operation condition for a normal operation of the volatile memory device, the test operation condition and the test operation being set based on a manufacturer, and the normal operation condition and the normal operation being set based on a standard specification;
• set a test mode with respect to a test object region corresponding to at least a portion of a memory cell array included in the volatile memory device;
• set a normal mode with respect to a normal region of the memory cell array other than the test object region;
• perform the test operation of the volatile memory device on the test object region based on the test operation condition during the test mode to detect error position information of errors in data stored in the test object region;
• perform the normal operation of the volatile memory device on the normal region based on the normal operation condition during the normal mode;
• and
• perform a runtime repair operation with respect to the volatile memory device based on the error position information.