Method and device for self trimming memory devices

A method, comprising:

• in response to receiving an indication of an operating temperature change or a reference voltage change, looking up operating parameters in a look-up table corresponding to a present operating temperature and reference voltage, and
• in response to not finding the operating parameters corresponding to the present operating temperature and reference voltage:
• setting the operating parameters of an integrated circuit for self trimming an internal timing of the integrated circuit including a circuit portion receiving a data stream on a data input and a clock signal on a clock input,
• wherein setting the operating parameters comprises performing a tuning phase of at least one of a setup time or a hold time by changing a relative time distance between the data stream received by a data input terminal and an active edge of the clock signal by insertion of a programmable or trimmable delay element or circuit, and
• recording the operating parameters with respect to the present operating temperature and reference voltage in the look-up table.

An integrated memory device, comprising:

• an array of memory cells with decoding and sensing circuitry;
• a memory controller;
• read and write circuitry associated to the sensing circuitry;
• logic circuit portions in said read and write circuitry including a logic element receiving a data stream on a data input and a clock signal on a clock input;
• a programmable or trimmable delay element or circuit upstream to the data input or the clock input;
• and
• a trimmer block including a first input to indicate an operating temperature and a second input to indicate a reference voltage;
• wherein the integrated memory device is configured, in response to receiving an indication of an operating temperature change or a reference voltage change, to:
• look up self trim operating parameters in a look-up table corresponding to the indicated operating temperature and reference voltage;
• and
• in response to not finding the self trim operating parameters corresponding to the present operating temperature and reference voltage, cause the programmable or trimmable delay element or circuit to:
• self trim the internal timing of the logic element by aligning in time at least one of the clock signal or the data stream;
• and
• record the self trim operating parameters with respect to the indicated operating temperature and reference voltage in the look-up table.

An integrated memory device structured to communicate with a host device or a System-on-Chip through a communication channel with respective pads;

• including:
• an array of memory cells with decoding and sensing circuitry;
• a memory controller;
• output buffers coupled to the array of memory cells and including a plurality of selectable final output stages coupled to the pads;
• a driver selector in the output buffer to select among the plurality of selectable final output stages for selecting an output impedance of the output buffer;
• and
• a programmable or trimmable delay element or circuit in the output buffer upstream to the plurality of selectable final output stages for fine tuning the output impedance of the output buffer.