Memory device

A memory device, comprising:

• a memory area having a plurality of memory blocks;
• and
• a control logic configured to control the memory area,
• wherein the control logic blocks access to at least one security block among the plurality of memory blocks in a first mode, and allows access to the at least one security block in a second mode, different from the first mode, and
• when a reading operation for the at least one security block is executed in the first mode, the reading operation and a programming operation for the at least one security block are executed.

A memory device, comprising:

• first word lines stacked on a substrate;
• first channel layers penetrating through the first word lines to extend in a first direction perpendicular to the substrate, and providing first memory cells accessible in a first mode and a second mode, different from the first mode;
• second word lines stacked on the substrate and electrically separated from the first word lines;
• second channel layers penetrating through the second word lines to extend in the first direction, and providing second memory cells accessible only in the second mode;
• and
• a control logic configured to select one of the first mode and the second mode as an operation mode, and store data corresponding to the number of times the second memory cells are accessed in the first mode, in the second memory cells.